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| MMUN2111LT1G Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Features http://onsemi.com PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) PIN 1 BASE (INPUT) R1 R2 * * * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 1 2 SOT-23 CASE 318 STYLE 6 MARKING DIAGRAM A6x M G G 1 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc A6x = Device Code x = A - L (Refer to page 2) M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage, Temperature Range Symbol PD Max 246 (Note 1) 400 (Note 2) 2.0 (Note 1) 3.2 (Note 2) 508 (Note 1) 311 (Note 2) 174 (Note 1) 208 (Note 2) -55 to +150 Unit mW mW/C C/W C/W C ORDERING INFORMATION Device MMUN21xxLT1G MMUN21xxLT3G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel RqJA RqJL TJ, Tstg SOT-23 10000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad (c) Semiconductor Components Industries, LLC, 2009 August, 2009 - Rev. 10 1 Publication Order Number: MMUN2111LT1/D MMUN2111LT1G Series DEVICE MARKING AND RESISTOR VALUES Device* MMUN2111LT1G MMUN2111LT3G MMUN2112LT1G MMUN2113LT1G MMUN2113LT3G MMUN2114LT1G MMUN2114LT3G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G (Note 3) MMUN2131LT1G (Note 3) MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G (Note 3) Package SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 Marking A6A A6B A6C A6D A6E A6F A6G A6H A6J A6K A6L R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 10 22 47 47 1.0 2.2 4.7 47 47 Shipping 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel *The "G'' suffix indicates Pb-Free package available. 3. New devices. Updated curves to follow in subsequent data sheets. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G ICBO ICEO IEBO - - - - - - - - - - - - - 50 50 - - - - - - - - - - - - - - - 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 - - nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% V(BR)CBO V(BR)CEO Vdc Vdc http://onsemi.com 2 MMUN2111LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS (Note 5) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2130LT1G MMUN2131LT1G MMUN2115LT1G MMUN2116LT1G MMUN2132LT1G MMUN2134LT1G MMUN2111LT1G MMUN2112LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2113LT1G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2133LT1G MMUN2134LT1G MMUN2115LT1G MMUN2116LT1G MMUN2131LT1G MMUN2132LT1G MMUN2130LT1G hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 - - - - - - - - - - - - - - - - - - - - - - 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 60 100 140 140 250 250 5.0 15 27 140 130 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc - - - - - - - - - - - Symbol Min Typ Max Unit Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) http://onsemi.com 3 MMUN2111LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS (Note 5) Input Resistor MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2130LT1G MMUN2131LT1G MMUN2132LT1G MMUN2133LT1G MMUN2134LT1G R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.8 0.8 0.17 - - 0.8 0.8 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 1.0 1.0 0.21 - - 1.0 1.0 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 1.2 1.2 0.25 - - 1.2 1.2 1.2 0.185 0.56 kW Symbol Min Typ Max Unit Resistor Ratio R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1 250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = -25C 75C 0.1 200 25C 150 100 RqJA = 625C/W 50 0 -50 0 50 100 150 0.01 0 20 40 60 80 IC, COLLECTOR CURRENT (mA) TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve Figure 2. VCE(sat) versus IC 4 VCE = 10 V 3 f = 1 MHz lE = 0 V TA = 25C 1000 h FE, DC CURRENT GAIN (NORMALIZED) TA = 75C 100 25C -25C C ob , CAPACITANCE (pF) 100 2 1 10 1 10 IC, COLLECTOR CURRENT (mA) 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 3. DC Current Gain Figure 4. Output Capacitance 100 75C IC , COLLECTOR CURRENT (mA) 10 25C TA = -25C 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 1 0.1 0.01 0.001 0 1 2 VO = 5 V 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current http://onsemi.com 5 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = -25C 25C 1 75C 1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 100 -25C 0.1 0.01 10 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 25C TA = -25C Cob , CAPACITANCE (pF) 3 10 1 2 0.1 VO = 5 V 1 0.01 0 1 2 3 4 5 6 7 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 25C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 h FE , CURRENT GAIN (NORMALIZED) TA = 75C 25C -25C 100 TA = -25C 75C 0.1 25C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 I C , COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C 25C -25C 0.8 C ob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 1 2 3 4 5 6 7 8 9 10 Vin, INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 2 V Vin , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = -25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 -25C VCE = 10 V 25C TA = 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 3.5 C ob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) -25C 25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2115LT1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C 0.1 -25C 0.01 25C TA = -25C 100 25C 1000 75C VCE = 10 V 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = -25C Cob, CAPACITANCE (pF) 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = -25C 1 75C 25C 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 9 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2116LT1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C -25C 0.01 TA = -25C 25C 1000 75C VCE = 10 V 0.1 25C 100 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 12 10 8 6 4 2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 100 75C 10 25C 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = -25C Cob, CAPACITANCE (pF) 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 1 TA = -25C 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2132LT1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 25C hFE, DC CURRENT GAIN 75C 1000 VCE = 10 V 100 25C 10 TA = -25C 0.01 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 12 10 8 6 4 2 0 f = 1 MHz lE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 75C 25C Cob, CAPACITANCE (pF) 1 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = -25C 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 11 MMUN2111LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS MMUN2133LT1 VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C 0.1 -25C 0.01 25C hFE, DC CURRENT GAIN 1000 VCE = 10 V 75C 100 TA = -25C 25C 10 0.001 0 30 20 40 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 8 7 Cob, CAPACITANCE (pF) 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz lE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 25C 1 0.1 0.01 TA = -25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage +12 V 10 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C Typical Application for PNP BRTs LOAD VO = 0.2 V 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 41. Input Voltage versus Output Current Figure 42. Inexpensive, Unregulated Current Source http://onsemi.com 12 MMUN2111LT1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 13 MMUN2111LT1/D |
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